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 BSM 200 GA 170 DN2
IGBT Power Module
* Single switch * Including fast free-wheeling diodes * Package with insulated metal base plate * RG on,min = 6.8 Ohm Type BSM 200 GA 170 DN2 BSM 200 GA 170 DN2 S Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 k Gate-emitter voltage DC collector current TC = 25 C TC = 80 C Pulsed collector current, tp = 1 ms TC = 25 C TC = 80 C Power dissipation per IGBT TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis Ptot 1750 + 150 -40 ... + 125 0.07 0.21 4000 20 11 F 40 / 125 / 56 sec Vac mm K/W C ICpuls 580 400 W VGE IC 290 200 Symbol VCE VCGR 1700 20 A Values 1700 Unit V VCE IC Package SINGLE SWITCH 1 SSW SENSE 1 Ordering Code C67070-A2705-A67 C67070-A2707-A67 1700V 290A 1700V 290A
1
Oct-27-1997
BSM 200 GA 170 DN2
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage VGE = VCE, IC = 16 mA Collector-emitter saturation voltage VGE = 15 V, IC = 200 A, Tj = 25 C VGE = 15 V, IC = 200 A, Tj = 125 C Zero gate voltage collector current VCE = 1700 V, VGE = 0 V, Tj = 25 C VCE = 1700 V, VGE = 0 V, Tj = 125 C Gate-emitter leakage current VGE = 20 V, VCE = 0 V AC Characteristics Transconductance VCE = 20 V, IC = 200 A Input capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Crss 1 Coss 2.5 Ciss 32 gfs 72 nF S IGES 320 ICES 1.6 6.4 2 nA VCE(sat) 3.4 4.6 3.9 5.3 mA VGE(th) 4.8 5.5 6.2 V Values typ. max. Unit
2
Oct-27-1997
BSM 200 GA 170 DN2
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time VCC = 1200 V, VGE = 15 V, IC = 200 A RGon = 6.8 Rise time VCC = 1200 V, VGE = 15 V, IC = 200 A RGon = 6.8 Turn-off delay time VCC = 1200 V, VGE = -15 V, IC = 200 A RGoff = 6.8 Fall time VCC = 1200 V, VGE = -15 V, IC = 200 A RGoff = 6.8 Free-Wheel Diode Diode forward voltage IF = 200 A, VGE = 0 V, Tj = 25 C IF = 200 A, VGE = 0 V, Tj = 125 C Reverse recovery time IF = 200 A, VR = -1200 V, VGE = 0 V diF/dt = -1400 A/s, Tj = 125 C Reverse recovery charge IF = 200 A, VR = -1200 V, VGE = 0 V diF/dt = -1400 A/s Tj = 25 C Tj = 125 C 14 50 Qrr 0.8 C trr VF 2.3 2.1 2.8 s V 110 160 tf 1250 1800 td(off) 200 400 tr 530 1000 td(on) ns Values typ. max. Unit
3
Oct-27-1997
BSM 200 GA 170 DN2
Power dissipation Ptot = (TC) parameter: Tj 150 C
1800 W Ptot 1400 1200 1000 800 600 400 200 0 0 20 40 60 80 100 120 C 160
Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C
10 3
t = 1.4s p
A IC 10 2
100 s 10 s
10 1
1 ms
10 ms
10 0 0 10
10
1
10
2
DC 3 10
V
TC
VCE
Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C
320 A IC 240 200 160 120 80 40 0 0
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0 K/W ZthJC 10 -1
IGBT
10 -2
D = 0.50 0.20 0.10 0.05 single pulse 0.02 0.01
10 -3
20
40
60
80
100
120
C
160
10 -4 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
TC
tp
4
Oct-27-1997
BSM 200 GA 170 DN2
Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C
400 A IC 300 250 200 150 100 50 0 0.0 1.0 2.0 3.0 4.0 V VCE 6.0
Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 125 C
400 A IC 300 250 200 150 100 50 0 0.0 1.0 2.0 3.0 4.0 V VCE 6.0
17V 15V 13V 11V 9V 7V
17V 15V 13V 11V 9V 7V
Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V
800 A IC 600 500 400 300 200 100 0 0
2
4
6
8
10
V 14 VGE
5
Oct-27-1997
BSM 200 GA 170 DN2
Typ. gate charge VGE = (QGate) parameter: IC puls = 200 A
20 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0, f = 1 MHz
10 2
nF VGE 16 14 12 10 800 V 1200 V C 10 1
Ciss
Coss 8 10 0 6 4 2 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 C 3.4 10 -1 0 5 10 15 20 25 30 V VCE 40 Crss
QGate
Reverse biased safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V, tp 1 ms, L < 20 nH
2.5
Short circuit safe operating area ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 20 nH
12
ICpulsIC di/dt = 1000A/s 3000A/s 5000A/s
ICsc/IC
8
1.5
di/dt = 1000A/s 3000A/s 5000A/s
6 1.0 4 0.5
allowed numbers of short circuit: <1000 time between short 2 circuit: >1s
0.0 0
200 400 600 800 1000 1200 1400
V 1800 VCE
0 0
200 400 600 800 1000 1200 1400
V 1800 VCE
6
Oct-27-1997
BSM 200 GA 170 DN2
Typ. switching time I = f (IC) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 6.8
10 4
Typ. switching time t = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, IC = 200 A
10 4
ns t 10 3 tdoff t
ns tdoff
10 3 tdon
tdon tr
tr
10 2
tf
10 2
tf
10 1 0
100
200
300
A IC
500
10 1 0
5
10
15
20
25
30
40
RG
Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 6.8
600
Typ. switching losses E = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, IC = 200 A
600
mWs E 400 E
mWs
Eon
400
300
300
Eon
200 Eoff 100
200
100
Eoff
0 0
100
200
300
A IC
500
0 0
5
10
15
20
25
30
40
RG
7
Oct-27-1997
BSM 200 GA 170 DN2
Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj
400 A IF 300 250 200 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 V VF 3.5 Tj=125C
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0 K/W
Diode
Tj=25C ZthJC
10 -1
10 -2
D = 0.50 10 -3 0.20 0.10 single pulse 0.05 0.02 0.01
10
-4
10 -5 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
8
Oct-27-1997
BSM 200 GA 170 DN2
Circuit Diagram
Package Outlines Dimensions in mm Weight: 420 g
9
Oct-27-1997
Nutzungsbedingungen
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Terms & Conditions of usage
The data contained in this product data sheet is exclusively intended for technically trained staff. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.eupec.com, sales&contact). For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. Please note, that for any such applications we urgently recommend - to perform joint Risk and Quality Assessments; - the conclusion of Quality Agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery depended on the realization of any such measures. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.


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